Erratum: High-quality ultra-fine GaN nanowires synthesized via chemical vapor deposition (Advanced Materials (2003) 15 (419))

Advanced Materials

Volumn 16, Issue 12, 2004, Pages 952-

  Chen, X ^a   Xu, J ^a   Wang, R M ^a   Yu, D ^b  

^a PEKING UNIVERSITY   (China)

^b NONE

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EID: 3142716087     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200490036     Document Type: Erratum

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