Gas-source molecular beam epitaxial growth and characterization of InNxP1-x on InP

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 252-256

  Bi, W G ^a   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Gas source molecular beam epitaxy (GSMBE); InNP; N plasma source; Nitrogen containing mixed group V compounds

Indexed keywords

EID: 0346819462     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0159-8     Document Type: Article

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