Applying double exposed sharp tip (DEST) technique to characterize material phenomena in DUV photoresist

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5753, Issue II, 2005, Pages 1108-1118

  Yuan, Lei ^a   Nagahara, Seiji ^b   Neureuther, Andrew ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b IMEC   (Belgium)

Author keywords

Acid diffusion; Acid surface loss; Double exposure; Non fickian diffusion; Process control; Quencher surface loss; Resist blur; Resist resolution; Resist surface interaction

Indexed keywords

ACID SURFACE LOSS; CRITICAL DIMENSION (CD); DOUBLE EXPOSURE; QUENCHER SURFACE LOSS; RESIST BLUR; RESIST RESOLUTION; RESIST SURFACE INTERACTION;

DIFFUSION; EXPOSURE CONTROLS; PATTERN RECOGNITION; SENSITIVITY ANALYSIS; SURFACE PHENOMENA; ULTRAVIOLET RADIATION;

PHOTORESISTS;

EID: 24644465030     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.598944     Document Type: Conference Paper

References (16)

1. J.S. Peterson, C.A. Mack, J. Sturtevant, J. Byers and D.A. Miller, "Non-constant diffusion coefficients: short description of modeling and comparison to experimental results", Proc. of SPIE, Vol. 2438, pp.167-180, 1995.
2. J. Byers, J. Peterson and J. Sturtevant, "Calibration of chemically amplified resist models", Proc. of SPIE, Vol. 2724, pp. 156-162, 1996.
3. Mosong Cheng, Ebo H. Croffie, and Andrew R. Neureuther, Proc. SPIE, vol. 3678, 867 (1999)
4. M.D. Stewart, M.H. Somervell, H.V. Tran, S.V. Postnikov and C.G. Wilson, "Study of acid transport using IR spectroscopy and SEM", Proc. of SPIE, Vol. 3999, pp.665-674, Mar. 2000.
5. F.A. Houle, W.D. Hinsberg, M. Morrison, M.I. Sanchez, G.Wallraff, C. Larson and J. Hoffnagle, "Determination of coupled acid catalysis-diffusion processes in a positive-tone chemically amplified photoresist", J. Val. Sci. Technol., B, 18(4), Jul/Aug, pp. 1874-1885, 2000.
6. E. Croffie, Lei Yuan, Mosong Cheng, Neureuther A, Houlihan F, Cirelli R, Watson P, Nalamasu O, Gabor A. "Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging", Journal of Vacuum Science & Technology B, vol.18, no.6, Nov. 2000, pp.3340-4. USA
7. Lei Yuan and Andrew R. Neureuther, "Improving chemically amplified resist modeling for 2D layout patterns ", Proc. SPIE vol. 5039, 1041 (2003)
8. Bunday, Bishop and Bennett, "Quantitative Profile-shape measurement study on a CD-SEM with application to etchbias control", Proc. Of SPIE, vol. 4689, 2002
9. M. Tanaka, C. Shishido, Y. Takagi, H. Morokuma, O. Komuro and H. Mori, "Cross-section gate feature identification using top-down SEM images", Proc. SPIE, Vol. 5038, 624, 2003
10. J.S. Hodges, Y.L. Lin, D.R. Burrow, R.H. Chiao, "Improved gate process control at the 130nm node using Spectroscopic Ellipsometry based profile metrology", Proc. SPIE, Vol. 5038, 215, 2003
11. X. Wu, P. Chan and M. Chan, "Impacts of nonrectangular FIN cross section on the electrical characteristics of FinFET", IEEE Transaction on Electron Devices, Vol. 52, No.1, 63, 2005
12. J.C. Taylor, C.R. Charles, R. Chambers, R. Deschner, R.J. LeSuer, W.E. Conley, S.D. Bums and C.G. Willson, Proc. SPIE, vol. 5376, 34, 2004
13. R.J.LeSuer, F.F. Fan, A.J. Bard, J.C. Taylor, P. Tsiartas, C.G. Willson, W.E. Conley, G. Feit and R.R. Kunz, Proc. SPIE, vol. 5376, 115, 2004
14. I. Grodnensky, K. Suwa, N. Farrar, E. Johnson and J. Pan, "Technique for optical characterization of exposure tool imaging performance down to 100nm", J. Vac. Sci. Technol. B, 17(6), 3285, Nov/Dec 1999.
15. K. Izuha, M. Asano, T. Fujisawa and S. Inoue, "Novel in-situ focus monitor technology in attenuated PSM under actual illumination condition", Proc. SPIE, vol. 5040, 590, 2003.
16. http://www.panoramictech.com/