Quantitative profile-shape measurement study on a cd-sem with application to etch-bias control

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4689 I, Issue , 2002, Pages 138-150

  Bunday, Benjamin D ^a   Bishop, Michael ^a   Bennett, Marylyn ^a   Swyers, John R ^b   Haberman Golan, Zipora ^c  

^a SEMATECH   (United States)

^b APPLIED MATERIALS INC   (United States)

^c Applied Materials Inc Israel   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; INTEGRATED CIRCUIT MANUFACTURE; SCANNING ELECTRON MICROSCOPY;

ETCH BIAS CONTROL;

PHOTOLITHOGRAPHY;

EID: 0036031274     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.473452     Document Type: Article

References (5)

1. C. Archie, B. Banke, R. Cornell, T. Hayes, E. Solecky, Three Dimensional Top Down Metrology: A Viable Alternative to AFM or Cross Section?, SPIE Microlithography Conference 2001, Proc. SPIE 4344 p. 366 2001.
2. O. Dror, G. Eytan, T. Marschner, Determination of Best Focus and Exposure Dose using CDSEM Sidewall Imaging, SPIE Microlithography Conference 2001, Proc. SPIE 4344 p. 355 2001.
3. 2001 International Technology Roadmap for Semiconductors (ITRS).
4. SEMI. 1999. Document E89-0999-Guide for Measurement System Capability Analysis.
5. Mandel, J. 1964. The Statistical Analysis of Experimental Data Section 12.5. Interscience Publishers, John Wiley and Sons, New York.