Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3340-3344

  Croffie, Ebo ^a   Yuan, Lei ^a   Cheng, Mosong ^a   Neureuther, Andrew ^a   Houlihan, Frank ^b   Cirelli, Ray ^b   Watson, Pat ^b   Nalamasu, Om ^b   Gabor, Allen ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c Olin Microlectron Materials Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN LIQUIDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MATHEMATICAL MODELS; PATTERN RECOGNITION; PHOTORESISTS;

PHOTOACID GENERATORS (PAG); POSTEXPOSURE BAKE (PEB) PROCESS;

PHOTOLITHOGRAPHY;

EID: 0034314865     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1324636     Document Type: Article

References (8)

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