Dependence of resist profile on exposed area ratio

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue II, 2001, Pages 628-636

  Shiobara, E ^a   Kawamura, D ^a   Matsunaga, K ^a   Onishi, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Acid evaporation; Acid re sticking; Chemically amplified resist; Exposure area ratio; High activation energy; Low k1 lithography; Overcoat layer; Resist profile

Indexed keywords

ACIDS; ACTIVATION ENERGY; EVAPORATION; MASKS;

RE-STICKING ACIDS;

PHOTORESISTS;

EID: 0034768843     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436896     Document Type: Conference Paper

References (12)