Structural and chemical analysis of a model Si-SiO2 interface using spatially resolved electron-energy-loss spectroscopy

Philosophical Magazine

Volumn 84, Issue 17, 2004, Pages 1753-1771

  Cheynet, M C ^a   Epicier, T ^b  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATIONS; ELECTRON ENERGY LOSS SPECTROSCOPY; HIGH RESOLUTION ELECTRON MICROSCOPY; MONOCHROMATORS; OPTICAL RESOLVING POWER; PERMITTIVITY; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON PROPERTIES; INTERFACIAL REGION; LATTICE IMAGING;

SILICON COMPOUNDS;

EID: 2442710238     PISSN: 14786435     EISSN: None     Source Type: Journal    
DOI: 10.1080/14786430310001659507     Document Type: Article

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