Growth modes and characterization of thin RTP silicon oxides

10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002

Volumn , Issue , 2002, Pages 11-14

  Eisele, I ^a   Ludsteck, A ^a   Schulze, J ^a   Nenyei Z ^b  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT; MOLECULAR BEAM EPITAXY; PHASE INTERFACES;

EXCESS OXYGEN; GROWTH CONDITIONS; GROWTH MODES; INTERFACE QUALITY; PROCESS CONDITION; THERMALLY GROWN OXIDE; THIN OXIDES; TUNNELING CURRENT;

SILICON OXIDES;

EID: 84962384797     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2002.1039433     Document Type: Conference Paper

References (3)

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2. B.E. Deal J. Electrochem. Soc. 125 (1978) 576
3. F.W. Smith and G. Ghidini J. Electrochem. Soc. (1982) 1300