Growth of 6H and 4H silicon carbide single crystals by the modified Lely process utilizing a dual-seed crystal method

Applied Physics Letters

Volumn 69, Issue 24, 1996, Pages 3728-3730

  Heydemann, V D ^a   Schulze, N ^a   Barrett, D L ^a,b   Pensl, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000881399     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117203     Document Type: Article

References (13)

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