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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 2, 1998, Pages 544-549

Raman scattering study of InGaAsP quaternary alloys grown on InP in the immiscible region

(4) Sugiura, Touko a Hase, Nobuyasu a Iguchi, Yasuhiro b Sawaki, Nobuhiko c

a TOYOTA NATIONAL COLLEGE OF TECHNOLOGY (Japan)

b SUMITOMO ELECTRIC INDUSTRIES LTD (Japan)

c NAGOYA UNIVERSITY (Japan)

Author keywords

Alloy semiconductor; Immiscibility; InGaAsP; Laser Raman spectroscopy; Spatial correlation model

Indexed keywords

COMPOSITION EFFECTS; OPTICAL CORRELATION; PHONONS; RAMAN SCATTERING; SEMICONDUCTING INDIUM PHOSPHIDE; SOLUBILITY;

QUATERNARY ALLOYS; SPATIAL CORRELATION MODEL;

SEMICONDUCTOR GROWTH;

EID: 0032003246 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.544 Document Type: Article

Times cited : (9)

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