SCOPUS 정보 검색 플랫폼

Volumn 14, Issue 5, 2002, Pages 594-596

A novel fabrication technique for multiple-wavelength photonic-integrated devices in InGaAs-InGaAsP laser heterostructures

(5) Lim, H S b Aimez, V d Ooi, B S a,c Beauvais, J d Beerens, J d

a IEEE

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c Phosistor Technologies Inc (United States)

d UNIVERSITÉ DE SHERBROOKE (Canada)

Author keywords

Gray mask; Implantation induced disordering; InGaAs InGaAsP; Multiple wavelength lasers; Quantum well intermixing

Indexed keywords

HETEROJUNCTIONS; ION IMPLANTATION; MASKS; MONOLITHIC INTEGRATED CIRCUITS; PHOSPHORUS; PHOTOLITHOGRAPHY; POINT DEFECTS; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICA;

GRAY MASK PHOTOLITHOGRAPHY; INDIUM GALLIUM ARSENIDE PHOSPHIDE; LASER HETEROSTRUCTURES; QUANTUM WELL INTERMIXING TECHNIQUE;

QUANTUM WELL LASERS;

EID: 0036576018 PISSN: 10411135 EISSN: None Source Type: Journal
DOI: 10.1109/68.998695 Document Type: Article

Times cited : (18)

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