Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation

IEEE Photonics Technology Letters

Volumn 9, Issue 5, 1997, Pages 587-589

  Ooi, B S ^a   Hamilton, C J ^b   McIlvaney, K ^b,d   Bryce, A C ^b,d   De La Rue, R M ^b,d   Marsh, J H ^b,d   Roberts, J S ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d IEEE

Author keywords

Gallium arsenide; Integrated optoelectronics; Laser materials processing applications; Laser radiation effects; Quantum wells; Quantum well intermixing; Semiconductor lasers

Indexed keywords

CRYSTAL DEFECTS; ENERGY GAP; HETEROJUNCTIONS; IRRADIATION; LIGHT ABSORPTION; RADIATION EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

DOUBLE QUANTUM WELL (DQW) LASER STRUCTURES; PHOTOABSORPTION INDUCED DISORDERING (PAID); QUANTUM WELL INTERMIXING (QWI);

QUANTUM WELL LASERS;

EID: 0031145780     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.588128     Document Type: Article

References (14)

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