Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing

IEEE Journal of Quantum Electronics

Volumn 33, Issue 1, 1997, Pages 45-54

  McKee, Andrew ^b,e   McLean, C J ^b   Lullo, Giuseppe ^b,c   Bryce, A Catrina ^b   De La Rue, Richard M ^b,f,g,h,i   Marsh, John H ^a,b   Button, Christopher C ^d  

^a IEEE

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c UNIVERSITY OF PALERMO   (Italy)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

^e Hewlett Packard Fiber Opt C   (United Kingdom)

^f UNIVERSITY COLLEGE LONDON   (United Kingdom)

^g UNIVERSITY OF TORONTO   (Canada)

^h LUCENT TECHNOLOGIES   (United States)

ⁱ TOHOKU UNIVERSITY   (Japan)

Author keywords

III IV semiconductors; InGaAs InGaAsP; Laser processing; Optoelectronic integration; Photonic integrated circuits; Quantum well intermixing

Indexed keywords

CURRENT DENSITY; INTEGRATED OPTOELECTRONICS; LASER RESONATORS; LIGHT ABSORPTION; LIGHT MODULATORS; OPTICAL WAVEGUIDES; PULSED LASER APPLICATIONS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS;

BANDGAP TUNED ELECTROABSORPTION MODULATORS; LASER INTERMIXING; PHOTOABSORPTION INDUCED DISORDERING; PHOTONIC INTEGRATED CIRCUITS; QUANTUM WELL INTERMIXING TECHNIQUE; RIDGE WAVEGUIDE LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030783404     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.554876     Document Type: Article

References (26)

1. T. H. Wood, "Multiple quantum well (MQW) wave-guide modulators," J. Lightwave Technol., vol. 6, pp. 743-757, 1988.
2. M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, "InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective-area MOCVD," IEEE J. Quantum Electron., vol. 29, pp. 2088-2096, 1993.
3. S. A. Schwarz, P. Mei, T. Venkatesan, R. Bhat, D. M. Hwang, C. L. Schartz, M. Koza, L. Nazar, and B. J. Skromme, "InGaAs/InP superlattice mixing induced by Zn or Si diffusion," Appl. Phys. Lett., vol. 53, pp. 1051-1053, 1988.
4. B. Tell, J. Shah, P. M. Thomas, J. W. Sulhoff, K. F. Brown-Goebler, A. D. Giovanni, B. I. Miller, and U. Koren, "Phosporus ion implantation induced intermixing of InGaAs/InP quantum well structures," Appl. Phys. Lett., vol. 54, pp. 1570-1572, 1989.
5. J. H. Marsh, S. A. Bradshaw, A. C. Bryce, R. Gwilliam, and R. W. Glew, "Impurity induced disordering in GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP," J. Electron. Mater., vol. 20, pp.
6. T. Miyazawa, H. Iwamura, and M. Naganuma, "Integrated external-cavity InGaAs/InP lasers using dielectric cap disordering," IEEE Photon. Technol. Lett., vol. 3, p. 421, 1991.
7. R. W. Glew, A. T. R. Briggs, P. D. Greene, and E. M. Allen, "The influence of the substrate on the thermal stability of InGaAs/InGaAsP quantum wells," in Proc. 4th Int. Conf. InP and Related Materials Newport, RI, 1992, pp. 234-236.
8. A. Rys, Y. Shieh, A. Compaan, H. Yao, and A. Bhat, "Pulsed laser annealing of GaAs implanted with Se and Si," Opt. Eng vol 29, pp. 329-338, 1990.
9. 1-xAs/GaAs superlattices by pulsed laser irradiation," Appl. Phys. Lett., vol. 50, pp. 1817-1819, 1987.
10. J. E. Epler, F. A. Ponce, F. K. J. Endicott, and T. L. Paoli, "Layer disordering of GaAs/AlGaAs superlattices by diffusion of laser incorporated Si," J. Appl. Phys., vol. 64, pp. 3439-3444, 1988
11. C. J. McLean, J. H. Marsh, R. M. De La Rue, A. C. Bryce, B. Garrett, and R. W. Glew, "Layer selective disordering by photo-absorption induced thermal diffusion in InGaAs/InP based multiple quantum well structures," Electron. Lett., vol. 28, p. 1117, 1992.
12. 1-y, and related binaries," J. Appl. Phys., vol. 53, pp. 8775-8792, 1982.
13. S. A. Bradshaw, J. H. Marsh, and R. W. Glew, "Very low loss waveguides formed by fluorine induced disordering of GaInAs/GaInAsP quantum wells," in Proc. 4th Int. Conf. InP and Related Materials, Newport, RI, 1992, pp. 604-607.
14. N. K. Dutta, "Calculation of auger rates in a quantum well structure and its application to InGaAsP quantum well lasers," J. Appl. Phys., vol. 54, p. 1236, 1983.
15. R. G. Hunsperger, Integrated Optics: Theory and Technology. Berlin: Springer-Verlag, Springer Series in Optical Sciences, vol. 33, Springer-Verlag Electromagnetic.
16. D. L. Lee, Principles of Integrated Optics. New York: Wiley, 1986.
17. L. A. Coldren, K. Furuya, and B. I. Miller, "On the formation of planar-etched facets in GaInAsP InP double heterostructures," J. Electrochem. Soc., vol. 130, pp. 1918-1926, 1983.
18. F. Devaux, E. Bigan, A. Ougazzaden, B. Pierre, F. Huet, M. Carre, and A. Carenco, "InGaAsP/InGaAsP multiple-quantum-well modulator with improved saturation intensity and bandwidth over 20-GHz," IEEE Photon. Technol. Lett., vol. 4, pp. 720-722, 1992.
19. R. G. Walker, "Simple and accurate loss measurement technique for semiconductor optical wave-guides," Electron. Lett., vol. 21, pp. 581-583, 1985.
20. H. C. Casey and P. L. Carter, "Variation of the intervalance band absorption with hole concentration in p-type InP," Appl. Phys. Lett., vol. 44, pp. 82-83, 1984.
21. J. Werner, E. Kapon, N. G. Stoffel, E. Colas, S. A. Schwarz, C. L. Schwartz, and N. Andreadakis, "Integrated external cavity GaAs/AlGaAs lasers using selective quantum well disordering," Appl. Phys. Lett., vol. 55, pp. 540-542, 1989.
22. S. Adachi, "Lattice thermal resistivity of III-V compound alloys," J. Appl. Phys., vol. 54, pp. 1844-1848, 1983.
23. Properties of Indium Phosphide, INSPEC EMIS Datareviews Series no. 6.
24. H. Peyre, F. Alsina, J. Camassel, J. Pascual, and R. W. Glew, "Thermal-stability of InGaAs/InGaAsP quantum wells," J. Appl. Phys., vol. 73, pp. 3760-3768, 1993.
25. C. J. McLean, A. McKee, G. Lullo, A. C. Bryce, R. M. De La Rue, and J. H. Marsh, "Quantum well intermixing with high spatial selectivity using a pulsed laser technique," Electron. Lett., vol. 31, pp. 1285-1286, 1995.
26. K. B. Kahen and G. Rajeswaran, "Study of the interdiffusion of GaAs-AlGaAs interfaces during rapid thermal annealing of ion implanted structures," J. Appl. Phys., vol. 66, pp. 545-551, 1989.