Direct writing of gratings in GaInAs/GaInAsP quantum wells using pulsed laser irradiation

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 252-255

  Ooi, B S ^a   Portnoi, E L ^a   McLean, C J ^a   McKee, A ^a   Button, C C ^a   Bryce, A C ^a   De La Rue, R M ^a   Marsh, J H ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; DIFFRACTION GRATINGS; LASER PULSES; PHOTOLUMINESCENCE; POINT DEFECTS; PULSED LASER APPLICATIONS; Q SWITCHED LASERS; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; WAVEGUIDES;

DIRECT WRITING; PULSE ENERGY DENSITY; PULSED LASER IRRADIATION; QUANTUM WELL INTERMIXING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029721777     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)