Optical properties of an InGaAs-InP interdiffused quantum well

IEEE Journal of Quantum Electronics

Volumn 34, Issue 6, 1998, Pages 982-990

  Li, E Herbert ^{a,b,c,d,e,f,g,h}  

^a IEEE   (United Kingdom)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d Kirsten Aeronautical Laboratory   (United States)

^e KK Engineering Company   (Hong Kong)

^f Micro Systems   (Hong Kong)

^g CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^h Optoelectronics Group   (United Kingdom)

Author keywords

Birefringence; Dielectric constants; Optical refraction; Quantum wells; Quantum well interdiffusion; Quantum well intermixing

Indexed keywords

BIREFRINGENCE; INTERDIFFUSION (SOLIDS); LIGHT ABSORPTION; LIGHT POLARIZATION; LIGHT REFRACTION; MATHEMATICAL MODELS; MATHEMATICAL TRANSFORMATIONS; PERMITTIVITY; REFRACTIVE INDEX; SEMICONDUCTING INDIUM PHOSPHIDE;

KRAMERS KRONIG TRANSFORMATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032094949     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.678594     Document Type: Article

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