Electrical and optical characteristics of isoelectronic Al-doped GaN films grown by metal organic chemical vapor deposition

Materials Research Society Symposium - Proceedings

Volumn 722, Issue , 2002, Pages 109-114

  Lee, Jae Hoon ^a   Kim, Jong Hyun ^a   Ko, Hyun Min ^a   Bae, Sung Bum ^b   Lee, Kyu Suk ^b   Cho, Yong Hoon ^c   Hahm, Sung Ho ^a   Lee, Yong Hyun ^a   Lee, Jung Hee ^a  

^a Kyungpook National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Chungbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

PHOTOLUMINESCENCE INTENSITY;

THIN FILMS;

EID: 0036456180     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-722-k3.5     Document Type: Conference Paper

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