Analysis of deep traps in 4,4′-bis(4-dimethylaminostyryl benzene) based light emitting diode devices

Organic Electronics

Volumn 5, Issue 1-3, 2004, Pages 53-58

  Nguyen, T P ^a   Le Rendu, P ^a   Leveque P ^a   Ip, J ^a   Gaudin, O ^b   Jackman, R B ^b  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Deep level transient spectroscopy; Organic light emitting diodes; Traps

Indexed keywords

ACTIVATION ENERGY; AMINES; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTROLUMINESCENCE; ELECTRONIC STRUCTURE; HOLE TRAPS; OXIDATION;

BANDGAP; BOLTZMANN CONSTANT; ORGANIC LIGHT EMITTING DIODES; SCHOTTKY BEHAVIOR;

LIGHT EMITTING DIODES;

EID: 2442499310     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2004.02.002     Document Type: Conference Paper

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