Electronic levels in MEH-PPV

Synthetic Metals

Volumn 111, Issue , 2000, Pages 535-537

  Stallinga, P ^a   Gomes, H L ^a   Rost, H ^b   Holmes, A B ^b   Harrison, M G ^c   Friend, R H ^c  

^a UNIVERSITY OF ALGARVE   (Portugal)

^b Melville Laboratory for Polymer Synthesis   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; HOLE TRAPS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

LOW FREQUENCY CAPACITANCE TRANSIENT TECHNIQUES; POLYMETHOXY ETHYLHEXYLOXY PHENYLENEVINYLENE; SHALLOW ACCEPTOR LEVEL;

SEMICONDUCTING POLYMERS;

EID: 0033700499     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(99)00413-0     Document Type: Article

References (5)

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4. Ferrari E.F., Koehler M., Hümmelgen I.A. Phys. Rev. B. 55:1997;9590.
5. Omling P., Weber E.R., Montelius L., Alexander H., Michel J. Phys. Rev. B. 32:1985;6571.