Effects of silicon-nitride passivation on the electrical behavior of 0.1-μm pseudomorphic high-electron-mobility transistors

Journal of the Korean Physical Society

Volumn 44, Issue 4, 2004, Pages 899-903

  Oh, Jung Hun ^a   Sul, Woo Suk ^a   Han, Hyo Jong ^a   Jang, Hae Kang ^a   Son, Myung Sik ^a   Rhee, Jin Koo ^a   Kim, Sam Dong ^a  

^a Dongguk University   (South Korea)

Author keywords

Passivation; pHEMT; Surface state

Indexed keywords

EID: 2442471796     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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