Electrical Characteristics of the 0.1 μm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 12, 2003, Pages 7189-7193

  Sul, Woo Suk ^a   Kim, Sam Dong ^a   Park, Hyung Moo ^a   Rhee, Jin Koo ^a  

^a Dongguk University   (South Korea)

Author keywords

BCB; High electron mobility transistors; Low dielectric constant; Passivations; Si3N 4

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON MOBILITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLIZING; MOLECULAR BEAM EPITAXY; PASSIVATION; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; THIN FILMS;

BCB; BENZO-CYCLO-BUTENE (BCB); HIGH-ELECTRON MOBILITY TRANSISTORS; LOW DIELECTRIC CONSTANT; SI3N4;

AROMATIC COMPOUNDS;

EID: 1242310388     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.7189     Document Type: Article

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