AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

Journal of Applied Physics

Volumn 82, Issue 7, 1997, Pages 3576-3580

  Hoke, W E ^a   Lyman, P S ^a   Mosca, J J ^a   McTaggart, R A ^a   Lemonias, P J ^a   Beaudoin, R M ^a   Torabi, A ^a   Bonner, W A ^b   Lent, B ^c   Chou, L J ^d   Hsieh, K C ^d  

^a RAYTHEON COMPANY   (United States)

^b Crystallod Inc   (United States)

^c Crystar Research   (Canada)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2442538785     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365676     Document Type: Article

References (15)

1. J. J. Rosenberg, M. Benlamri, P. D. Kirchner, J. M. Woodall, and J. P. Pettit. IEEE Electron Device Lett. EDL-6, 491 (1985).
2. A. Ketterson, M. Maloney, W. T. Masselink, CK. Peng, J. Klem, R. Fischer, W. Kopp, and H. Morkoc, IEEE Electron Device Lett. 6, 628 (1985).
3. W. A. Bonner, B. J. Skromme, E. Berry, H. L. Gilchrist, and R. E. Nahory, Inst. Phys. Conf. Ser. 96, 337 (1989).
4. H. Jeon, J. Ding, A. V. Nurmikko, H. Luo, N. Samarth, J. K. Furdyna, W. A. Bonner, and R. E. Nahory, Appl. Phys. Lett. 57, 2413 (1990).
5. A. P. Roth, Z. Wasilewski, Q. Sun, C. Lacelle, T. Bryskiewicz, D. Coulas, and J. P. Noad, J. Cryst. Growth 113, 379 (1991).
6. W. E. Hoke, P. S. Lyman, J. R. Carter, H. T. Hendriks, W. A. Bonner, and B. Lent, J. Vac. Sci. Technol. B 13, 678 (1995).
7. I. J. Fritz, J. F. Klem, J. E. Schirber, J. A. Olsen, and W. A. Bonner, Appl. Phys. Lett. 66, 1957 (1995).
8. H. Shoji, K. Otsubo, T. Kusunoki, T. Suzuki, T. Uchida, and H. Ishikawa, Jpn. J. Appl. Phys., Part 2 35, L778 (1996).
9. W. E. Hoke, P. S. Lyman, J. J. Mosca, H. T. Hendriks, A. Torabi, W. A. Bonner, B. Lent, L.-J. Chou, and K. C. Hsieh, J. Appl. Phys. 81, 968 (1997).
10. W. A. Bonner, B. Lent, J. Freschi, and W. E. Hoke, SPIE Conference on Producibility of II-VI Materials and Devices, Orlando, Fl, 6-8 April 1994; Proc. SPIE 2228, 33 (1994).
11. W. E. Hoke, D. G. Weir, P. J. Lemonias, H. T. Hendriks, and G. S. Jackson, J. Vac. Sci. Technol. B 13, 733 (1995)
12. S. Brierley, J. Appl. Phys. 74, 2760 (1993).
13. PC Epitaxy, Philips Electronic Instruments Co., 1995, Mahwah, N.J.
14. G. J. Whaley and P. I. Cohen, J. Vac. Sci. Technol. B 6, 625 (1988).
15. S. K. Brierley, W. E. Hoke, P. S. Lyman, and H. T. Hendriks, Appl. Phys. Lett. 59, 3306 (1991).