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Volumn 233, Issue 1-2, 2001, Pages 150-160
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Deep level effects on the characteristics of Al0.25Ga0.75As/In0.20Ga0.80 As/GaAs high electron mobility transistors grown by solid source MBE
a
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Author keywords
A3. molecular beam epitaxy; B2. semiconducting III V materials; B3. high electron mobility transistors
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Indexed keywords
CARRIER MOBILITY;
CRYSTAL DEFECTS;
CURRENT VOLTAGE CHARACTERISTICS;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ELECTRIC CURRENTS;
ELECTRON TRAPS;
MOLECULAR BEAM EPITAXY;
PHOTOCONDUCTIVITY;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
THERMAL EFFECTS;
TRANSCONDUCTANCE;
DEEP LEVEL EFFECTS;
DRAIN SATURATION CURRENTS;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0035502074
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)01523-8 Document Type: Article |
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Times cited : (1)
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References (14)
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