Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 362-370

  Hamm, R A ^a   Chandrasekhar, S ^a   Lunardi, L ^a   Geva, M ^a   Malik, R ^a   Humphrey, D ^b   Ryan, R ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SHAPE MEMORY EFFECT;

CARBONTETRABROMIDE; CARRIER SCATTERING; GALLIUM INDIUM ARSENIDE; GUMMEL CHARACTERISTICS; VACANCY CONCENTRATION; VEGARD LAW;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030190561     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00004-8     Document Type: Article

References (21)

1. B.T. Cunningham, L.J. Guido, J.E. Baker, J.S. Major, Jr., N. Holonyak, Jr. and G.E. Stillman, Appl. Phys. Lett. 55 (1989) 687.
2. C.R. Abernathy, S.J. Pearton, F. Ren, W.S. Hobsen, T.R. Fullowan, A. Katz, A.S. Jordan and J. Kovalchick, J. Crystal Growth 105 (1990) 375.
3. F. Ren et al., Appl. Phys. Lett. 59 (1991) 3613.
4. T.P. Chin. P.D. Kirchner, J.M. Woodall and C.W. Tu, Appl. Phys. Lett. 59 (1991) 2865.
5. C.J. Palmstrom, B.P. Van der Gaag, J.I. Song, W.P. Hong and S.A. Schwarz, Appl. Phys. Lett. 64 (1994) 3139.
6. J. Shirakashi, T. Yamada, M. Qi, S. Nozaki, K. Takahashi, E. Tokumitsu and M. Konagai, J. Appl. Phys. 30 (1991) L1609.
7. W.P. Hong, J.I. Song, C.J. Palmstrom, B. Van der Gaag, K.B. Chough and J.R. Hayes, IEEE Trans. Electron Dev. 41 (1994) 19.
8. K. Zhang, W. Hwang, D.L. Miller and L.W. Kapitan, Appl. Phys. Lett. 63 (1993) 2400.
9. D. Ritter, M.B. Panish, R.A. Hamm, D. Gershoni and I. Brener, Appl. Phys. Lett. 56 (1990) 1448.
10. R.A. Hamm, S. Chandrasekhar, L. Lunardi and M. Geva, J. Crystal Growth 148 (1994) 1.
11. R.A. Hamm, R. Malik, D. Humphrey, R. Ryan, S. Chandrasekhar, L. Lunardi and M. Geva, Appl. Phys. Lett. 67 (1995).
12. M.B. Panish, R.A. Hamm, D. Ritter, H.S. Luftman and C.M. Cotell, J. Crystal Growth 112 (1991) 343.
13. R. Heckingbottom, Molecular Beam Epitaxy and Heterostructures, Eds. L.L. Chang and K. Ploog, NATO ASI Series E: Applied Sciences No. 87 (Nijhoff, Dordrecht, 1985) p. 71.
14. For a review of these issues see, for example: M. Panish and H. Temkin, Gas Source Molecular Beam Epitaxy, Springer Series in Materials Science No. 26 (Springer, Berlin, 1993) ch. 5.
15. M.B. Panish and R.A. Hamm, J. Crystal Growth 78 (1986) 445.
16. O.E. Stillman, S.A. Stockman, C.M. Colomb, A.W. Hanson and M.T. Fresina, Mater. Res. Soc. Symp. Proc. 325 (1994) 197.
17. D. Ritter, R.A. Hamm, A. Feygenson and M.B. Panish, Appl. Phys. Lett. 59 (1991) 3431.
18. G.E. McGuire, Ed., Characterization of Semiconductor Materials, Vol. 1 (Noyes, New Jersey, 1989) p. 11.
19. J.D. MacKenzie, C.R. Abernathy, S.J. Pearton and S.N.G. Chu, Appl. Phys. Lett. 66 1995 1397.
20. R.E. Pritchard, R.C. Newman, J. Wagner, M. Maier, A. Mazuelas, K.H. Ploog, P.A. Lane, T. Martin and C.R. Whitehouse, Appl. Phys. Lett. 66 (1995).
21. L.M. Lunardi, S. Chandrasekhar, A.H. Gnauck, C.A. Burrus and R.A. Hamm, IEEE Photon. Technol. Lett. 7 (1995) 1201.