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Electrochemical and Solid-State Letters

Volumn 8, Issue 8, 2005, Pages

Large grain poly-si thin film fabricated at 180°C employing ELA and ICP-CVD

(5) Han, Sang Myeon a Lee, Min Cheol b Park, Joong Hyun a Song, In Hyuk a Han, Min Koo a

a Seoul National University (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; EXCIMER LASERS; HELIUM; HYDROGEN; POLYSILICON; THIN FILMS;

EXCIMER LASER ANNEALING (ELA); INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION (ICP-CVD); MICROCRYSTALLINE SILICON FILM; RECRYSTALLIZATION; SILICON THIN FILMS;

CHEMICAL VAPOR DEPOSITION;

EID: 24344437609 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1951202 Document Type: Article

Times cited : (2)

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