Properties of the interfacial layer in the high-k gate stack and transistor performance

Proceedings - Electrochemical Society

Volumn PV 2005-05, Issue , 2005, Pages 141-145

  Bersuker, G ^a   Peterson, J ^a   Barnett, J ^a   Korkin, A ^c   Sim, J H ^a,d   Choi, R ^a   Lee, B H ^b   Greer, J ^e   Lysaght, P ^a   Huff, H R ^a  

^a SEMATECH   (United States)

^b IBM   (United States)

^c NGS   (United States)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^e UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL OXIDE; HIGH-K GATE STACK; OXYGEN REMOVAL;

DATA ACQUISITION; ELECTRIC PROPERTIES; OXYGEN; SILICON; TRANSISTORS;

SURFACE CHEMISTRY;

EID: 31844457142     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. ITRS, 2003
2. G. Bersuker et al., JJAP, 43, p. 7899, 2004
3. J. Barnett et al., MRS, Spring 04, Proc. Vol. 811, E1.4.1,2004
4. J. R. Hauser and K. Ahmed, in Characterization and Metrology for ULSI Technology: 1998 Int'l Conf.,AIP Conf. Proceedings, 449, p.235.
5. A. Korkin, G. Bersuker, and H. R. Huff, Comput. Materials Science, 24, p.223, 2002
6. M. Agustin et al., EMC, 2004