Semi-empirical tight-binding calculation of the electronic structure of GaP1-xNx (x = 0.25, 0.5, 0.75) alloys

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 267-269

  Miyoshi, Seiro ^a,b   Onabe, Kentaro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP; PHOTOLUMINESCENCE;

BOWING PARAMETER; TIGHT BINDING CALCULATIONS; VALENCE BAND;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031076046     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00226-2     Document Type: Article

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