Nitrogen concentration dependence of photoluminescence decay time in GaP1-xNx alloys

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 231-233

  Yaguchi, Hiroyuki ^a   Miyoshi, Seiro ^a   Arimoto, Hideo ^a   Saito, Shiro ^a   Akiyama, Hidefumi ^b   Onabe, Kentaro ^a   Shiraki, Yasuhiro ^b   Ito, Ryoichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; NITROGEN; PHOTOLUMINESCENCE;

DECAY TIME; RADIATIVE TRANSITION; RELAXATION PROCESSES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031076173     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00206-7     Document Type: Article

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