Formation of Ga interstitials in (Al,In)yGa 1-yN xP 1-x alloys and their role in carrier recombination

Applied Physics Letters

Volumn 85, Issue 14, 2004, Pages 2827-2829

  Thinh, N Q ^a   Vorona, I P ^a   Izadifard, M ^a   Buyanova, I A ^a   Chen, W M ^a   Hong, Y G ^b   Xin, H P ^b   Tu, C W ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; BONDING STRENGTH; COMPLEX DEFECTS; LATTICE MATCHING;

ALUMINUM ALLOYS; ANNEALING; BONDING; MAGNETIC RESONANCE SPECTROSCOPY; MONOCHROMATORS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; QUENCHING; SPECTRUM ANALYSIS; THERMODYNAMIC STABILITY;

GALLIUM COMPOUNDS;

EID: 8444243747     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803918     Document Type: Article

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