Lateral high-speed bipolar transistors on SOI for RF SoC applications

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1376-1383

  Sun, I Shan Michael ^a   Ng, Wai Tung ^a   Kanekiyo, Koji ^b   Kobayashi, Takaaki ^b   Mochizuki, Hidenori ^b   Toita, Masato ^b   Imai, Hisaya ^b   Ishikawa, Akira ^b   Tamura, Satoru ^b   Takasuka, Kaoru ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b Asahi Kasei EMD   (Japan)

Author keywords

BiCMOS integrated circuits; Lateral bipolar junction transistors (LBJTs); Microwave transistors; Radio frequency (RF) system on chip (RF SoC); Silicon bipolar transistors; Siliconon insulator (SOI)technology

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY;

BICMOS INTEGRATED CIRCUITS; LATERAL BIPOLAR JUNCTION TRANSISTORS (LBJTS); MICROWAVE TRANSISTORS; RF SYSTEM-ON-CHIP; SILICON BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 23944482251     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850676     Document Type: Article

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