RF Bipolar Transistors in CMOS compatible technologies

Proceedings of the IEEE Hong Kong Electron Devices Meeting

Volumn , Issue , 2001, Pages 108-111

  I Shan Michael Sun, ^a   Wai Tung Ng, ^a   Mok, P K T ^a   Mochizuki, H ^a   Shinomura, K ^a   Imai, H ^a   Ishikawa, A ^a   Saito, N ^a   Miyashita, K ^a   Tamura, S ^a   Takasuka, K ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AVALANCHE DIODES; CMOS INTEGRATED CIRCUITS; DEPOSITION; ELECTRIC RESISTANCE; GATES (TRANSISTOR); SCANNING ELECTRON MICROSCOPY;

POLYEMITTER DEPOSITION;

BIPOLAR TRANSISTORS;

EID: 0034835981     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. An 0.3-um Si epitaxial base BiCMOS technology with 37GHz Fmax and 10-V Bvceo for RF telecommunication
2. Technologies and design of low-power RF microsystems
3. High voltage RF silicon bipolar transistor