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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 4 B, 2001, Pages

Pore characteristics of low-dielectric-constant films grown by plasma-enhanced chemical vapor deposition studied by positron annihilation lifetime spectroscopy

(4) Suzuki, Ryoichi a Ohdaira, Toshiyuki a Shioya, Yoshimi b Ishimaru, Tomomi c

a ELECTROTECHNICAL LABORATORY (Japan)

b Semiconductor Process Laboratory (Japan)

c CANON INC (Japan)

Author keywords

Hexamethyldisiloxane; Low dielectric constant; Low k; Plasma enhanced chemical vapor deposition; Pore size; Positron lifetime; Slow positron beam

Indexed keywords

FILM GROWTH; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PORE SIZE; POSITRON ANNIHILATION SPECTROSCOPY; SPECTRUM ANALYSIS;

CAVITY VOLUME; HEXAMETHYLDISILOXANE;

DIELECTRIC FILMS;

EID: 0035870377 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.l414 Document Type: Article

Times cited : (32)

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