Copper barrier properties of low dielectric constant SiOCNH film deposited by plasma-enhanced CVD

Journal of the Electrochemical Society

Volumn 151, Issue 1, 2004, Pages

  Shioya, Yoshimi ^a   Ishimaru, Tomoni ^b   Ikakura, Hiroshi ^b   Nishimoto, Yuko ^a   Ohdaira, Toshiyuki ^c   Suzuki, Ryoichi ^c   Maeda, Kazuo ^a  

^a Semiconductor Proc Lab Comp Ltd   (Japan)

^b CANON INC   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; AMMONIA; COMPRESSIVE STRESS; COPPER; DIELECTRIC FILMS; LEAKAGE CURRENTS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; THERMAL DIFFUSION;

HEXAMETHYLDISILOXANE; NITROUS OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0842311653     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1629099     Document Type: Article

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