The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device

Microelectronic Engineering

Volumn 81, Issue 2-4, 2005, Pages 171-180

  Chong, Lit Ho ^a   Mallik, Kanad ^a   De Groot, C H ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

Fowler Nordheim tunneling; Titanium dioxide; Tunnel transistors

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; EVAPORATION; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; METALLIC FILMS; MOSFET DEVICES; SEMICONDUCTOR DEVICES; SILICON; SUBSTRATES; TITANIUM DIOXIDE;

DOPANTS; FOWLER-NORDHEIM TUNNELING; INTERCONNECT INTEGRATION; TUNNEL TRANSISTORS;

MIM DEVICES;

EID: 23444458118     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.03.003     Document Type: Conference Paper

References (26)

1. S.M. Sze Physics of semiconductor devices 2001 John Wiley and sons New York
2. B. Doyle, R. Arghavani, D. Barlage, S. Datta, M. Doczy, J. Kavalieros, A. Murthy, and R. Chau Intel Technol. J. 6 2 2002 42 Available from: http://www.intel.com/technology/itj/2002/volume06issue02/
3. J. Tucker, C. Wang, and P. Carney Appl. Phys. Lett. 65 1994 618
4. J. Snyder, C. Helms, and Y. Nishi Appl. Phys. Lett. 67 1995 1420
5. H. Mizuta, M. Wagner, and K. Nakazota IEEE Trans. Electron Dev. 48 2001 1103
6. K. Fujimaru, and H. Matsumura Jpn. J. Appl. Phys. 1 35 1996 2090
7. M. Lenzlinger, and E.H. Snow J. Appl. Phys. 40 1969 278
8. E. Snow, P. Campbell, R. Rendell, F. Buot, D. Park, C. Marrian, and R. Magno Appl. Phys. Lett. 72 1998 3071
9. E. Snow, P. Campbell, R. Rendell, F. Buot, D. Park, C. Marrian, and R. Magno Semicond. Sci. Tech. 13 1998 A75
10. K. Fujimaru, R. Sasajima, and H. Matsumura J. Appl. Phys. 85 1999 6912
11. M. Houng, Y. Wang, and W. Chang J. Appl. Phys. 87 1999 1488
12. Silvaco International, Atlas Device Simulation software, Silvaco International Ltd., 2002
13. T. Schulz, W. Rosner, E. Landgraf, L. Risch, and U. Langmann Solid State Electron. 46 2002 985
14. K. Mori, A. Duong, and W. Richardson IEEE Trans. Electron Dev. 49 2002 61
15. E. Gili, V.D. Kunz, C.H. de Groot, T. Uchino, P. Ashburn, D.C. Donaghy, S. Hall, Y. Wang, and P.L.F. Hemment Solid State Electron. 48 2004 511
16. S. Campbell, H.S. Kim, D. Gilmer, B. He, T. Ma, and W. Gladfelter IBM J. Res. Dev. 43 1999 383
17. B.-S. Jeong, D. Norton, and J. Budai Solid State Electron. 47 2003 2275
18. J. Tinoco, M. Estrada, and G. Romero Microelectron. Reliab. 43 2003 895
19. J. Moodera, L. Kinder, T. Wong, and R. Meservey Phys. Rev. Lett. 74 1995 3273
20. K. McCarty Surf. Sci. 543 2003 185
21. D. Mardare Mat. Sci. Eng. B 95 2002 83
22. V. Mikhelashvili, and G. Eisenstein J. Appl. Phys. 89 2001 3256
23. J. Unnam, R. Shenoy, and R. Clark Oxid. Met. 26 1986 231
24. E.M. Vogel, K.H. Ahmed, B. Hormung, W.K. Henson, P. McLarty, G. Lucovsky, J. Hauser, and J. Wortman IEEE Trans. Electron Dev. 45 1998 1350
25. S. Campbell, D. Gilmer, X.c. Wang, M.t. Hiseh, H.s. Kim, W. Gladfelter, and J. Yan IEEE Trans. Electron Dev. 44 1997 104
26. G. Ghibaudo, S. Bruyere, T. Devoivre, B. DeSalvo, and E. Vincent IEEE Trans. Sem. Man. 13 2000 152