Theoretical consideration of a new nanometer transistor using metal/insulator tunnel-junction

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 A, 1996, Pages 2090-2094

  Fujimaru, Kouji ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Barrier height; Metal insulator tunneling; Metal oxide semiconductor field effect transistor (MOSFET); Schottky current; Switching time

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT CONTROL; ELECTRIC INSULATORS; ELECTRON TUNNELING; ESTIMATION; NANOTECHNOLOGY; NUMERICAL ANALYSIS; PERMITTIVITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE STRUCTURES; SWITCHING; TUNNEL JUNCTIONS;

BARRIER HEIGHT; GATE ELECTRODES; METAL INSULATOR TUNNEL JUNCTION; NANOMETER TRANSISTOR; SANDWICHED INSULATOR; SWITCHING TIME;

MOSFET DEVICES;

EID: 0030122781     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2090     Document Type: Article

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