A three-dimensional simulation of electrostatic characteristics for carbon nanotube array field effect transistors

Microelectronic Engineering

Volumn 81, Issue 2-4, 2005, Pages 434-440

  Li, Yiming ^a,b,d   Chou, Hung Mu ^b   Lee, Jam Wem ^b   Lee, Bo Shian ^c  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d NONE   (Taiwan)

Author keywords

3D Modeling; Bottom gate; Carbon nanotube array; Computer simulation; Electrostatic potential; Field effect transistor; Gate capacitance; Top gate; Warp around gate

Indexed keywords

CAPACITANCE; CARBON NANOTUBES; COMPUTER SIMULATION; ELECTROSTATICS; MATHEMATICAL MODELS; MOS DEVICES;

3D MODELING; BOTTOM GATE; CARBON NANOTUBE ARRAY; ELECTROSTATIC POTENTIAL; GATE CAPACITANCE; TOP GATE; WARP AROUND GATE;

FIELD EFFECT TRANSISTORS;

EID: 23444446069     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.03.044     Document Type: Conference Paper

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