Design, Optimization, and Performance Analysis of New Photodiode Structures for CMOS Active-Pixel-Sensor (APS) Imager Applications

IEEE Sensors Journal

Volumn 4, Issue 1, 2004, Pages 135-144

  Wu, Chung Yu ^a   Shih, Yu Chuan ^a   Lan, Jeng Feng ^a   Hsieh, Chih Cheng ^a   Huang, Chien Chang ^a   Lu, Jr Houng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Active pixel sensor (APS); CMOS imager; Dark current; Pn junction photodiode; Spectral response

Indexed keywords

CHARGE COUPLED DEVICES; DOPING (ADDITIVES); ELECTRIC POTENTIAL; IMAGE SENSORS; OPTIMIZATION; OXIDATION; PHOTODIODES; SEMICONDUCTOR JUNCTIONS; SILICON;

ACTIVE-PIXEL-SENSOR (APS); CMOS IMAGER; DARK CURRENT; PN-JUNCTION PHOTODIODES; SPECTRAL RESPONSE;

CMOS INTEGRATED CIRCUITS;

EID: 2342583419     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2003.820361     Document Type: Article

References (19)

1. E. R. Fossum, "CMOS image sensors: electronic camera on a chip," IEEE Trans. Electron Devices, vol. 44, pp. 1689-1698, Oct. 1997.
2. S.K.Mendis, S.E.Kemeny, and E.R.Fossum,"A128 × 128CMOS active pixel image sensor for highly integrated imaging systems," in IEDM, 1993, pp. 583-586.
3. Y. C. Shih and C. Y. Wu, "The design of high-performance 128 × 128 CMOS image sensors using new current-readout techniques," in Proc. IEEE Int. Symp. Circuits and Systems, vol. 5, May 1999, pp. 168-171.
4. D. A. Martin, H. S. Lee, and I. Masaki, "A mixed-signal array processor with early vision applications," IEEE J. Solid-State Circuits, vol. 33, pp. 497-502, Mar. 1998.
5. R. Dominguez et al., "A0.8-μm CMOS two-dimensional programmable mixed-signal focal-plane array processor with on-chip binary imaging and instructions storage," IEEE J. Solid-State Circuits, vol. 32, no., pp. 1013-1026, July 1997.
6. H. S. Wong, R. T. Chang, E. Crabble, and P. D. Agnello, "CMOS active pixel image sensor fabricated using a 1.8-V, 0.25-μm CMOS technology," IEEE Trans. Electron Devices, vol. 45, pp. 889-894, Apr. 1998.
7. C. Xu, W. Zhang, and M. Chan, "A low voltage hybrid bulk/SOI CMOS active pixel image sensor," IEEE Electron Device Lett., vol. 22, pp. 248-250, May 2001.
8. L. G. McIlrath, "A low-power low-noise ultrawide-dynamic-range CMOS imager with pixel-parallel A/D conversion," IEEE J. Solid-State Circuits, vol. 36, pp. 846-853, May 2001.
9. B. Mansoorian, H. Y. Yee, S. Huang, and E. Fossum, "A 250 mW, 60 frames/s1280 × 720 pixel 9b CMOS digital image sensor," in Proc. IEEE Int. Solid-State Circuits Conf., Feb. 1999, pp. 312-313.
10. D. Scheffer, B. Dierickx, and G. Meynants, "Random addressable 2048 × 2048 active pixel image sensor," IEEE Trans. Electron Devices, vol. 44, pp. 1716-1720, Oct. 1997.
11. I. Shcherback, A. Belenky, and O. Yadid-Pecht, "Expirical dark current modeling for complementary metal oxide semiconductor active pixel sensor," Opt. Eng., vol. 41, no. 6, pp. 1216-1219, June 2002.
12. G. A. Hawkins, "Lateral profiling of interface states along the sidewalls of channel-stop isolation," Solid-State Electron., vol. 28, no. 9, pp. 945-956, 1985.
13. H. S. Wong, "Technology and device scaling considerations for CMOS imagers," IEEE Trans. Electron Devices, vol. 43, pp. 2131-2142, Dec. 1996.
14. R. M. Guidash, T. H. Lee, P. P. K. Lee, and D. H. Sackett, "A 0.6 μm CMOS pinned photodiode color imager technology," in IEDM, 1997, pp. 927-929.
15. D. N. Yaung, S. G. Wuu, and Y. K. Fang et al., "Nonsilicide source/drain pixel for 0.25-μm CMOS image sensor," IEEE Electron Device Lett., vol. 22, Feb. 2001.
16. K. Yonemoto, H. Sumi, R. Suzuki, and T. Ueno, "A CMOS image sensor with a simple FPN-reduction technology and a hole accumulated diode," in Proc. IEEE Int. Solid-State Circuits Conf., Feb. 2000, pp. 102-103.
17. J.S. Ho and M.C.Chiang et al., "A new design for a 1280 × 1024 digital CMOS image sensor with enhanced sensitivity, dynamic range and FPN," in Proc. Int. Symp. VLSI Technology, Systems, and Applications, 1999, pp. 235-238.
18. W. Zhang and M. Chan, "Properties and design optimization of photo-diodes available in a current CMOS technology," in IEDM, 1998, pp. 22-25.
19. H. D. Lee and J. M. Hwang, "Accurate extraction of reverse leakage current components of shallow suicided P+-n junction for quarter and subquarter-micron MOSFET's," IEEE Trans. Electron Devices, vol. 45, pp. 1848-1850, Aug. 1998.