Nonsilicide source/drain pixel for 0.25-μm CMOS image sensor

IEEE Electron Device Letters

Volumn 22, Issue 2, 2001, Pages 71-73

  Yaung, Dun Nian ^a   Wuu, Shou Gwo ^b   Fang, Yean Kuen ^a   Wang, Chung S ^b   Tseng, Chien Hsien ^b   Liang, Mon Song ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; ETCHING; ION IMPLANTATION; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

DRAIN PIXELS; NONSILICIDES; PHOTORESPONSE;

IMAGE SENSORS;

EID: 0035250165     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.902835     Document Type: Article

References (10)

1. H.-S. P. Wong, R. T. Chang, and P. D. Agnello, "CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-μm CMOS technology," IEEE Trans. Electron Devices, vol. 45, pp. 889-894, Apr. 1998.
2. E. R. Fossum, "CMOS image sensors: Electronic camera-on-a-chip," IEEE Trans. Electron Devices, vol. 44, pp. 1689-1698, Oct. 1997.
3. H.-S. P. Wong, "CMOS image sensors - Recent advances and device scaling considerations," in IEDM Tech. Dig., 1997, pp. 201-204.
4. H. Kawashima et al., "A 1/4 inch format 250 000 pixel amplifier MOS image sensor using CMOS process," in IEDM Tech. Dig., 1993, pp. 575-578.
5. Z. S. Hung and T. Ando, "A novel amplified image sensor with a-Si:H photoconductor and MOS transistors," IEEE Trans. Electron Devices, vol. 37, pp. 1432-1438, Sept. 1990.
6. O. Yadid-Pecht, R. Ginosar, and Y. Diamand, "A random access photodiode array for intelligent image capture," IEEE Trans. Electron Devices, vol. 38, pp. 1772-1780, Aug. 1991.
7. H. S. Wong, "Technology and device scaling considerations for CMOS imagers," IEEE Trans. Electron Devices, vol. 44, pp. 2131-2142, 1996.
8. H. D. Lee and J. M. Hwang, "Accurate extraction of reverse leakage current components of shallow silicided p+-n junction for quarter and subquarter-micron MOSFET's," IEEE Trans. Electron Devices, vol. 45, pp. 1848-1850, Aug. 1998.
9. H.-D. Lee and Y.-J. Lee, "Arsenic and phosphorus double ion implanted source/drain junction for 0.25-and sub-0 25-μm MOSFET technology," IEEE Electron Device Lett., vol. 20, pp. 42-44, Jan. 1999.
10. S. K. Wuu et al., "High performance 0.25-μm CMOS color imager technology with nonsilicide source/drain pixel," IEDM Tech. Dig., pp. 705-708.