Accurate extraction of reverse leakage current components of shallow suicided p+-n junction for quarter- and sub-quarter-micron MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1848-1850

  Lee Hi Deok, ^a   Hwang, Jeong Mo ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Reverse leakage current; Shallow suicided junction; Subquarter micron device

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; LEAKAGE CURRENTS; MOSFET DEVICES; TITANIUM COMPOUNDS;

SHALLOW SILICIDED JUNCTION; SHALLOW TRENCH ISOLATION; SUBQUARTER MICRON DEVICE; TITANIUM SALICIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 0032138127     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704389     Document Type: Article

References (6)

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