Strain effects in GaN on sapphire: towards a quantitative comprehension

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 411-415

  Briot, O ^a   Alexis, J P ^a   Gil, B ^a   Aulombard, R L ^a  

^a UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ENERGY GAP; EXCITONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RESIDUAL STRESSES; SAPPHIRE; SPECTROSCOPIC ANALYSIS; SPECTROSCOPY; STRAIN; THERMAL EXPANSION;

BANDGAP; GALLIUM NITRIDE; REFLECTANCE SPECTROSCOPY; STRAIN EFFECTS; THERMAL EXPANSION COEFFICIENTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029765223     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)