Effects of hydrogen on GaN metalorganic vapor-phase epitaxy using tertiarybutylhydrazine as nitrogen source

Journal of Crystal Growth

Volumn 266, Issue 1-3, 2004, Pages 347-353

  Hsu, Yu Jen ^a   Hong, Lu Sheng ^a   Jiang, Jyh Chiang ^a   Chang, Jing Chong ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

A1. Density functional theory; A3. Metalorganic chemical vapor deposition; B1. Gallium nitride; B1. Tertiarybutylhydrazine

Indexed keywords

CHEMICAL BONDS; CONCENTRATION (PROCESS); ENERGY GAP; GALLIUM NITRIDE; PROBABILITY DENSITY FUNCTION; STOICHIOMETRY; TOXICITY;

BAND-GAP ENERGY; PHONON ENERGY; PHOTONIC DEVICES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 2342476574     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.065     Document Type: Conference Paper

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