Fabrication and structure of an opal-gallium nitride nanocomposite

Semiconductor Science and Technology

Volumn 16, Issue 2, 2001, Pages

  Davydov, V Yu ^a   Dunin Borkovski, R E ^b   Golubev, V G ^a   Hutchison, J L ^b   Kartenko, N F ^a   Kurdyukov, D A ^a   Pevtsov, A B ^a   Sharenkova, N V ^a   Sloan, J ^b   Sorokin, L M ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; NITRIDES; OPTOELECTRONIC DEVICES; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

SYNTHETIC OPALS;

NANOSTRUCTURED MATERIALS;

EID: 0034825141     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/2/101     Document Type: Article

References (13)

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