Highly reliable MIS capacitors with plasma nitridation and doubled dielectric-constant tantalum pentoxide

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1832-1838

  Miki, Hiroshi ^a   Shimamoto, Yasuhiro ^a   Furukawa, Ryoichi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Dielectric breakdown; Dielectric materials; Metal insulator semiconductor (MIS) capacitors; MOS memory integrated circuits; Permittivity

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; NITRIDING; PERMITTIVITY; PLASMA APPLICATIONS; POLYSILICON; TANTALUM COMPOUNDS;

DIELECTRIC BREAKDOWN; PLASMA NITRIDATION; TANTALUM PENTOXIDE;

MIS DEVICES;

EID: 23344453985     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.852725     Document Type: Article

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