1.5 nm equivalent thickness Ta2O5 high-k dielectric with rugged Si suited for mass production of high density DRAMs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 755-758

  Asano, I ^a   Kunitomo, M ^a   Yamamoto, S ^a   Furukawa, R ^a   Sugawara, Y ^a   Uemura, T ^a   Kuroda, J ^a   Kanai, M ^a   Nakata, M ^a   Tamaru, T ^a   Nakamura, Y ^a   Kawagoe, T ^a   Yamada, S ^a   Kawakita, K ^a   Kawamura, H ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; LIFE CYCLE; SEMICONDUCTING SILICON; SERVICE LIFE; TANTALUM COMPOUNDS;

MASS PRODUCTIONS; PAUSE REFRESH PROPERTY;

CAPACITORS;

EID: 0032267891     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)