Leakage-current mechanism of a tantalum-pentoxide capacitor on rugged Si with a CVD-TiN plate electrode for high-density DRAMs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 99-100

  Miki, H ^a   Kunitomo, M ^a   Furukawa, R ^a   Tamaru, T ^a   Goto, H ^a   Iijima, S ^a   Ohji, Y ^a   Yamamoto, H ^a   Kuroda, J ^a   Kisu, T ^a   Asano, I ^a  

^a Central Res Lab

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SEMICONDUCTING SILICON; SILICA; TITANIUM NITRIDE;

PLATE ELECTRODE; TANTALUM PENTOXIDE;

CAPACITORS;

EID: 0033280875     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)