A new multilayered structure for multilevel magnetoresistive random access memory (MRAM) cell

IEEE Transactions on Magnetics

Volumn 34, Issue 4 PART 1, 1998, Pages 1069-1071

  Jeong, Won Cheol ^a   Lee Byung Il, ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FORCE; MAGNETIC FIELDS; MAGNETIC FILMS; MAGNETORESISTANCE; RANDOM ACCESS STORAGE;

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM);

MAGNETIC FILM STORAGE;

EID: 0032114808     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.706359     Document Type: Article

References (4)

1. S. Tehrani, E. Chen, M. Durlam, T. Zhu, and H. Goronkin, "High Density Nonvolatile Magnetoresistive RAM," IEDM Tech. Dig., pp. 193-196, 1996
2. H. - J. Kim, B. -1. Lee, S. - K. Joo, "Development of unusual magnetic anisotropy in Co-based trilayers," J. Appl. Phys., vol. 81, pp. 3995-3997, April 1997.
3. D. D. Tang, P. K. Wang, V. S. Speriosu, S. Le and K. K. Rung, "SpinValve RAM Cell" IEEE Tram. Magn., vol. 31, pp. 3206-3208, November 1995.
4. B. A. Everitt, A. V. Pohm, and J. M. Daughton, "Size dependence of switching thresholds for pseudo spin valve MRAM cells" J. App. Phys., vol 81, pp. 4020-4022, April 1997.