Nonvolatile RAM based on magnetic tunnel junction elements

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2000, Pages 130-131

  Durlam, M ^a   Naji, P ^a   DeHerrera, M ^a   Tehrani, S ^a   Kerszykowski, G ^a   Kyler, K ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC HYSTERESIS; MAGNETIC STORAGE; MAGNETORESISTANCE; POLARIZATION; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTIONS;

RANDOM ACCESS STORAGE;

EID: 0034429727     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. High density nonvolatile magnetoresistive RAM
2. Microstructured magnetic tunnel junctions
3. Progress and outlook for MRAM technology
4. Magneto-resistive IC memory limitations and architecture implications
5. Tunnel oxide and ETOX flash scaling limitation