The mechanism of chemical vapor deposition of cubic boron nitride films from fluorine-containing species

Angewandte Chemie - International Edition

Volumn 44, Issue 30, 2005, Pages 4749-4753

  Zhang, W J ^a,d   Chan, C Y ^a   Meng, X M ^a   Fung, M K ^a   Bello, I ^a   Lifshitz, Y ^a,b   Lee, S T ^a   Jiang, X ^c  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^c UNIVERSITY OF SIEGEN   (Germany)

^d TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

Author keywords

Chemical vapor deposition; Crystal growth; Nitrides; Plasma chemistry; Reaction mechanisms

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALS; CYCLOTRON RESONANCE; FILM GROWTH; MIXTURES;

ELECTRON CYCLOTRON RESONANCE PLASMA; GAS MIXTURES;

CUBIC BORON NITRIDE;

EID: 23044486217     PISSN: 14337851     EISSN: None     Source Type: Journal    
DOI: 10.1002/anie.200500320     Document Type: Article

References (20)

1. R. H. Wentorf, J. Chem. Phys. 1962, 36, 1990-1991.
2. P. B. Mirkarimi, K. F. McCarty, D. L. Medlin, W. G. Wolfer, T. A. Friedmann, E. J. Klaus, G. F. Cardinale, D. G. Howitt, J. Mater. Res. 1994, 9, 2925-2938.
3. T. Yoshida, Diamond Relat. Mater. 1996, 5, 501-507, and references therein.
4. W. J. Zhang, I. Bello, Y. Lifshitz, S. T. Lee, MRS Bull. 2003, 28, 184-188, and references therein.
5. X. W. Zhang, H. G. Boyen, N. Deyneka, P. Ziemann, F. Banhart, M. Schreck, Nat. Mater. 2003, 2, 312-315.
6. Y. Lifshitz, S. R. Kasi, J. W. Rabalais, W. Eckstein, Phys. Rev. B 1990, 41, 10 468-10 480.
7. Y. Lifshitz, T. Kohler, T. Frauenheim, I. Guzmann, A. Hoffman, R. Q. Zhang, X. T. Zhou, S. T. Lee, Science 2002, 297, 1531-1533.
8. P. B. Mirkarimi, K. F. McCarty, D. L. Medlin, Mater. Sci. Eng. R 1997, 21, 47-100, and references therein.
9. W. J. Zhang, S. Matsumoto, Appl. Phys. A 2000, 71, 469-472.
10. W. J. Zhang, S. Matsumoto, K. Kurashima, Y. Bando, Diamond Relat. Mater. 2001, 10, 1881-1885.
11. C. Y. Chan, W. J. Zhang, X. M. Meng, K. M. Chan, I. Bello, Y. Lifshitz, S. T. Lee, Diamond Relat. Mater. 2003, 12, 1162-1168.
12. W. J. Zhang, I. Bello, Y. Lifshitz, K. M. Chan, X. M. Meng, Y. Wu, C. Y. Chan, S. T. Lee, Adv. Mater. 2004, 16, 1405-1408.
13. W. J. Zhang, C. Y. Chan, K. M. Chan, I. Bello, Y. Lifshitz, S. T. Lee, Appl. Phys. A 2003, 76, 953-955.
14. Z. F. Zhou, I. Bello, M. K. Lei, K. Y. Li, C. S. Lee, S. T. Lee, Surf. Coat. Technol. 2000, 128, 334-340.
15. W J. Zhang, X. Jiang, S. Matsumoto, Appl. Phys. Lett. 2001, 79, 4530-4532.
16. W. J. Zhang, S. Matsumoto, Chem. Phys. Lett. 2000, 330, 243-248.
17. K. Larsson, J. O. Carlsson, J. Phys. Chem. B 1999, 103, 6533-6538.
18. B. Mårlid, K. Larsson, J. O. Carlsson, Phys. Rev. B 1999, 60, 16 065-16 072.
19. M. P. Seah, W. A. Dench, Surf. Interface Anal. 1979, 1, 2-11.
20. X. Jiang, K. Helming, W. J. Zhang, S. Matsumoto, Chem. Vap. Deposition 2002, 8, 262-265.