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Volumn 16, Issue 6, 2005, Pages 646-649

Influence of substrate temperature on the deposition of μc-Si:H thin film fabricated with VHF-PECVD and its structural properties

Author keywords

C Si:H thin films; Optical emission spectroscopy; SiH4 plasma; Very high frequency plasma enhanced chemical vapor deposition (VHF PECVD)

Indexed keywords

EMISSION SPECTROSCOPY; FILM GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SUBSTRATES; THERMAL EFFECTS; VOLUME FRACTION;

EID: 22944467543     PISSN: 10050086     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (14)

References (12)
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  • 5
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  • 6
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    • High growth-rate deposition of μc-Si:H thin film at low temperature with VHF-PECVD
    • Yang H D, Wu C Y, Mai Y H, et al. High growth-rate deposition of μc-Si:H thin film at low temperature with VHF-PECVD[J]. Int J Mod Phys B, 2002, 16(28,29): 4259-4262.
    • (2002) Int J Mod Phys B , vol.16 , Issue.28-29 , pp. 4259-4262
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  • 7
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  • 9
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.