Optical emission spectroscopy investigation on the RF-generated SiH4 plasma

Guangdianzi Jiguang/Journal of Optoelectronics Laser

Volumn 14, Issue 4, 2003, Pages 375-379

  Yang, Hui Dong ^a,b   Wu, Chun Ya ^a   Zhu, Feng ^a   Mai, Yao Hua ^a   Zhang, Xiao Dan ^a   Zhao, Ying ^a   Geng, Xin Hua ^a   Xiong, Shao Zhen ^a  

^a NANKAI UNIVERSITY   (China)

^b Wuyi University   (China)

Author keywords

A Si:H c Si:H; Optical emission spectroscopy (OES); RF glow discharge; SiH4 plasma

Indexed keywords

EMISSION SPECTROSCOPY; PLASMAS; SILANES; SPECTRUM ANALYSIS;

OPTICAL EMISSION SPECTROSCOPY; SILANE PLASMA;

GLOW DISCHARGES;

EID: 0043161973     PISSN: 10050086     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

1. Shah A, Torres P, Tscharner R, et al. Photovoltaic technology: the case for thin-film solar cells [J]. Science, 1999, 285: 692-698.
2. Wehrspohn R B, Powell M J, Deane S C, et al. Dangling-bond defect state creation in microcrystalline silicon thin film transistors [J]. Appl. Phys. Lett., 2000, 77(5): 1-3.
3. Knipp D, Stiebig H, Folsch J, et al. Amorphous silicon based nipiin structure for color detection [J]. J. Appl. Phys., 1998, 83(3): 1463-1468.
4. Shah A, Meier J, Vallat-Sauvain E, et al. Microcrystalline silicon and micromorph tandem solar cells [J]. Thin Solid Films, 2002, 403-404: 179-187.
5. MAI Yao-hua, LI Hong-bo, XUE Jun-ming, et al. A new model for light trapping scheme of a-Si solar cell and its optimization [J]. J. of Optoelectronics · Laser, 2001, 12(12): 1222-1225. (in Chinese)
6. Perrin J. Plasma and surface reactions during a-Si:H film growth [J]. J. of Non-Cryst. Solids, 1991, 137 and 138: 639-644.
7. Fukuda Y, Sakuma Y, Fukai C, et al. Optical emission spectroscopy study toward high rate growth of micro-crystalline silicon [J]. Thin Solid Films, 2001, 386: 256-260.
8. Paranjpe A P, McVittie J P, Self S A. A tuned langmuir probe for measurements in for glow discharges [J]. J. Appl. Phys., 1990, 67(11): 6718-6727.
9. D Mataras, S Cavadias, D Rapakoulias. Spatial profiles of reactive intermediates in rf silane discharges [J]. J. Appl. Phys., 1989, 66(1): 119-124.
10. Koh J, Fujiwara H, Lu Y, et al. Real time spectroscopic ellipsometry for characterization and optimization of amorphous silicon-based solar cell structures [J]. Thin Solid Films, 1998, 313-314: 469-473.
11. Kitagawa T, Kondo M, Matsuda A. In situ observation of low temperature growth of crystalline silicon using reflect high-energy electron diffraction [J]. J. Non-Cryst. Solids, 1991, 266-269: 64-68.
12. Hsia H L, Hwang H L, Yang B, et al. Study on low temperature facetting growth of polycrystalline silicon thin films by ECR downstream plasma CVD with different hydrogen dilution [J]. Appl. Surf. Sci., 1999, 142: 316-321.
13. Guha S, Yang J, Williamson D L, et al. Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity [J]. Appl. Phys. Lett., 1999, 74(13): 1860-1862.
14. P Hapke, F Finger. High deposition rates for microcrystalline silicon with low temperature plasma enhanced chemical vapor deposition processes [J]. J. of Non-Cryst. Solids, 1998, 227-230: 861-865.
15. GUO L, Kondo M, Fukawa M, et al. High rate deposition of microcrystalline silicon using conventional plasma-enhanced chemical vapor deposition [J]. Jpn. J. Appl. Phys., 1998, 37: 1116-1118.
16. Belenguer Ph, Boeuf J P. Transition between different regimes of rf glow discharges [J]. Phys. Rev. A, 1990, 41(8): 4447-4459.
17. Yang H D, Wu C Y, Mai Y H, et al. Fabrication of hydrogenated microcrystalline silicon thin films at low temperature by VHF-PECVD [J]. Chinese Journal of Semiconductors, 2002, 23(9): 902-908.
18. Goerlitzer M, Torres P, Beck N, et al. Structural properties and electronic transport in intrinsic microcrystalline silicon deposited by VHF-GD technique [J]. J. Non-Cryst. Solids, 1998, 227-230: 996-1000.