High growth-rate deposition of μc-Si:H thin film at low temperature with VHF-PECVD

International Journal of Modern Physics B

Volumn 16, Issue 28-29, 2002, Pages 4259-4262

  Yang, Huidong ^a,b   Wu, Chunya ^a   Mai, Yaohua ^a   Li, Hongbo ^a   Li, Yan ^a   Zhaoa, Ying ^a   Xue, Junming ^a   Chena, Yousu ^a   Ren, Huizhi ^a   Geng, Xinhua ^a   Xiong, Shaozhen ^a  

^a NANKAI UNIVERSITY   (China)

^b Wuyi University   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; SILICON;

CONFERENCE PAPER; CRYSTALLIZATION; EXCITATION; FILM; GROWTH RATE; LOW TEMPERATURE; PHASE TRANSITION; PRESSURE; RAMAN SPECTROMETRY; SPECTROSCOPY;

EID: 0037146275     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0217979202015212     Document Type: Conference Paper

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